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单源真空蒸发法制备ZnSe薄膜的实验研究 被引量:3

Preparation of ZnSe Thin Film by Single Source Vacuum Evaporation
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摘要 本文采用单源真空蒸发法制备了ZnSe薄膜,利用电子探针、X射线粉晶衍射等现代测试手段研究了蒸发温度(700-1050℃)、基片温度(0-200℃)、基片材料(单晶硅、玻璃)以及热处理温度(300-400℃)等因素的改变对ZnSe薄膜的成份和结构的影响规律,建立了单源真空蒸发沉积ZnSe薄膜及热处理的实验方法。  ZnSe thin film were preparated by vacuum evaporation.The composition and structures of ZnSe thin film were studied by EMPA and XRD with the change of temperature of evaporation,temperature of substrate,different substrates and temperature of heat treatment.The preparation and heat treatment method of ZnSe thin film by single source vacuum evaporation were established.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2007年第4期863-868,共6页 Journal of Synthetic Crystals
基金 国家自然科学基金(No.40472051) 中国地质大学(北京)矿物岩石材料开发应用国家专业实验室开放研究基金(No.6001)资助
关键词 单源真空蒸发 ZnSe薄膜 电子探针 X射线粉晶衍射 single source vacuum evaporation ZnSe thin film EMPA XRD
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参考文献9

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二级参考文献1

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同被引文献17

  • 1王爱坤,周国香,李国昌.ZnSe太阳电池[J].太阳能学报,2004,25(6):804-806. 被引量:3
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