镁离子掺杂多孔硅的蓝光发射

Blue Photoluminescence from Magnesium-doped Porous Silicon

用电化学方法对多孔硅薄膜进行了镁离子的化学掺杂。用荧光分光光度计分析了样品的光致发光特性,发现镁掺杂增强了多孔硅的蓝光发射,当镁离子浓度增大到0.002mol/L时,可使蓝光强度达到多孔硅红光强度的一半。红外吸收谱表明,掺镁多孔硅的表面形成较完整的Si-O-Si网络结构,分析结果认为,多孔硅的蓝光光激发主要发生在多孔硅的纳米硅粒中,光发射主要发生在多孔硅中包裹纳米硅SiOx层中的发光中心上,对实验结果进行了合理的解释。

Magnesium ions were embedded into porous silicon films by electrochemical method. Scanning probe microscope was used to characterize the surface morphology of films. Fluorescence photospectrometer was used to research the photoluminescence properties of the samples. The blue emission of porous silicon was enhanced as magnesium ions＇ doping. When the concentration of magnesium ions increased to 0.002mol/L, the intensity of the blue light approached half of the red light intensity of the porous silicon without doping. The FTIR showed that the surface of magnesium-doped porous silicon have l L formed a goodish integrated cross-linked Si-O-Si network. It is concluded that the blue light excitation mainly occurred inside the silicon nanoparticles in porous silicon; however, the emission occurred in the luminescence centers in SiOx layers covering silicon nanoparticles. The experimental results have been explained reasonably.