在电共沉积GaAs薄膜上制作肖特基势垒的研究

STUDY ON THE SCHOTTKY BARRIERS GROWN ON THE ELECTRODEPOSION GAAS FILMS

应用化学电共沉积法在Ti片、导电玻璃和导电PI基片上制备了GaAs多晶薄膜,并在薄膜上应用电子束蒸发淀积了一层超薄的SiOx,然后采用PVD法在其上淀积一层金属薄层,制备出MIS结构的肖特基势垒。经测试Ag-SiOx-nGaAs结构和Au-SiOx-nGaAs结构的I-V特性,表明所制备的肖特基势垒具有良好的整流特性。

The chemical electrodeposition approach to fabricate GaAs polycrystalline film on Ti slice, TCO glass and electric PI slice with an over-thin SiO, deposited on the film by using electron beam evaporation was presented in this paper. Schottky barriers of MIS structure was grown on the SiO, film by depositing a metal film with PVD approach. The grown schottky barriers show good rectifier characteristics by testing the Ⅰ-Ⅴ characteristics of the structure of Ag-SiO,-nGaAs and Au-SiO,-nGaAs.