摘要
采用两步法和埋入PMN-PT单晶为模板的等离子放电烧结(SPS)技术制备出了致密的单一钙钛矿相的PMN-PNN-PT陶瓷,随后在1200℃下退火100h来诱导晶体的生长。实验结果表明,PMN-PNN-PT单晶<111>方向的生长速度明显快于<001>方向,而<111>方向生长的晶体形状为V字形,这是由钙钛矿结构的生长机理决定的,钙钛矿结构晶体的生长是通过<001>方向的层状生长来实现的。
A small piece of (001) or (111) Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) seed crystals was embedded in Pb(Mg1/3Nb2/3)O3 -Pb(Ni1/3Nb2/3)O3-PbTiO3 (PMN-PNN-PT) polycrystalline matrix to form the fully dense disk by spark plasma sintering technique. Specimens were subsequently annealed at 1200 ℃ for 100 h to induce crystal growth. The results show that growth in the 〈1 1 1〉 direction is faster than in the 〈00 1〉 direction, and the 2D morphology with V-shaped single crystals of PMN-PNN-PT were also observed when the (111) seeds plate was used which may indicate the layer growth mechanism for the {100} faces.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2007年第A01期439-441,共3页
Rare Metal Materials and Engineering
基金
国家自然科学基金(50432030)
关键词
弛豫基压电单晶
固相法生长
铌镁酸铅
铌镍酸铅
relaxor-based single crystals
solid state growth
lead magnesium niobate
lead nickel niobate