摘要
本文论述了暗电流I和光倍增因子M_p与温度T的关系,并测量了InGaAs/InGaAsP/InP SAGM-APD的暗电流—温度变化率与M_p-T特性。当温度由20℃升至90℃时,暗电流将增大10～30倍;而由20℃升至60℃时,光倍增因字M_p将减小1/3左右。文中还建议以严格的高低温循环来淘汰可能早期失效的SAGM-APD管芯。
In this paper, the dependences of the dark current and optical multiplication factor on temperature for InGaAs/InGaAsP/InP SAGM-APD have been investigated and measured. Experiments show that the dark current will increase 10 to 30 times when the temperature rises up from 20℃ to 90℃,and the optical multiplication factor M_p will decrease by about 1/3 when the temperature rises from 20℃ to 60℃.The phenomena observed during the measurement are discussed. The paper also suggests to eliminate the nonsuitable chips for the SAGM-APD by the critical high-to-low temperature cycling.
出处
《光通信研究》
1990年第4期48-55,共8页
Study on Optical Communications
