摘要
从理论上重点分析和研究了器件行波电极的微波特性，在半绝缘ＧａＡｓ衬底上设计了具有ｎ＋重掺杂外延层和共平面电极的ＧａＡｓ／ＧａＡｌＡｓ定向耦合器型行波调制器。针对实验中发现的行波电极上微波的高传输损耗问题，分析了起因并提出了器件的改进设计方案。
The GaAs/GaAlAs traveling wave directional coupler optical modulator on S.I. GaAs substrates with a n + epilayer and the coplanar microstrip electrode are designed based on theoretical analysis and especially the analysis and study of the microwave characteristics of the traveling wave electrodes in the device. Then, the problem of high transmission loss of the microwave in traveling wave electrode, which was found during the experiments, is analyzed and the related modified structure of the traveling wave directional coupler modulator with a 35 GHz bandwidth is designed.
出处
《光学学报》
EI
CAS
CSCD
北大核心
1997年第5期581-585,共5页
Acta Optica Sinica
基金
国家自然科学基金
"863"高技术资助项目
