窄禁带半导体材料中共振缺陷态测量

MEASUREMENT OF RESONANT DEFECT STATES IN NARROW GAP SEMICONDUCTORS

运用量子电容谱测量技术，在窄禁带半导体材料ＩｎＳｂ和ＨｇＣｄＴｅ价带和导带中分别发现了两个共振缺陷态．

By using a newly developed measuring technique,i.e. the quantum capacitance spectroscopy,resonant defect states were observed in the valence band and the conduction band of narrow gap semiconductor InSb and HgCdTe materials. On the basis of a developed experimental model,the properties of the resonant defect states are investigated.