GaAs表面硫化学钝化,CH_3CSNH_2处理新探

SRPES AND PL FURTHER STUDIES OF CHEMICAL PASSIVATED GaAs SURFACE BY CH 3CSNH 2 TREATMENT

应用同步辐射光电子谱（ＳＲＰＥＳ）和光致荧光（ＰＬ）方法探讨不同钝化条件对ＧａＡｓ表面键合状态和电子态的影响．发现无论在酸性溶液或碱性溶液条件下，经过ＣＨ３ＣＳＮＨ２处理的ＧａＡｓ表面Ｓ都与Ｇａ和Ａｓ成键，形成硫化物钝化层；钝化层形成后，ＰＬ谱的强度明显增强。

In this paper, CH 3CSNH 2 passivated GaAs(100) surfaces in different conditions such as in alkali and acid solution were investigated by SRPES and PL. SRPES reveals that sulfur bonds both Ga and As on GaAs surfaces. Improvements of PL intensities reveal the reduction of surface combination velocity, resulting in the reduction of surface defect states due to the formation of sulfur passivation films.