混晶GaAs_(1-x)P_x∶N中N_X带的发光瞬态过程研究

The Transient Spectroscopic Study on Tenary GaAs 1-x P x ∶N Alloys

采用皮秒量级的超快速光谱技术，分析了混晶ＧａＡｓ１－ｘＰｘ∶Ｎ材料发光瞬态过程．结果证实了材料随组份变化，从间接带到直接带（ｘｃ＝０．４５Ｋ，７７Ｋ）转变的带增强效应．

The pico second ultrafast spectroscopic technology is used to study the tenary GaAs 1-x P x∶ N alloys. The results confirm the band structure enhancement effect in GaAs 1-x P x∶ N alloys. The PL decay measurements of N X band show that the fast intraband tunneling and slow luminescent decay coexist in GaAs 1-x P x∶ N alloys.