室温射频磁控溅射沉积ITO薄膜的研究

Properties of Indium Tin Oxide Thin Film Deposited by RF Magnetron Sputtering at Room Temperature

报道透明导电膜不加衬底温度、无需沉积后的退火工艺、用射频磁控溅射沉积氧化铟、锡（ＩＴＯ）薄膜获得电阻率３×１０－４Ω·ｃｍ，在可见光区平均透光率８４％的优良性能．

The purpose of this letter is to demonstrate a simple technique for the deposition of Sn doped In 2O 3 (ITO) thin film by RF magnetron sputter without temperature control of substrate and without annealing. The film has resistivity as low as 3×10 -4 Ω·cm and optical transmittance of about 84 % in the visible range. The crystal shape and structure of the film are studied by the scan electronmicroscope and the x ray diffraction.