摘要
In1-xGaxAs是一种Ⅲ-Ⅴ族化合物半导体合金材料,其光谱响应截止波长可随合金组分x值的不同在0.87μm(GaAs)～3.5μm(InAs)范围内变化。InGaAs材料在光通讯领域的广泛应用和可在常温下工作的特点,使其成为焦平面成像领域的研究热点。国际市场已有商业化产品,主要应用于民用、军用、航空、空间遥感等领域。在介绍In1-xGaxAs短波红外焦平面探测器的主要特性及研制进展的基础上,重点介绍了国际上在InGaAs光谱响应范围向可见光扩展的研究动向。
As a Ⅲ-Ⅴ semiconductor material, In1-xGaxAs can response from 0.87μm （GaAs） to 3.5 μm （InAs） by tuning the relative amount of Gallium in the alloy. With the wide applications in the area of optical communication, the related researches in InGaAs infrared Focal Plane Array （FPA） are also attracting huge interests due to the advantage of RT working conditions. There are several commercialization products related to InGaAs FPA in international market, applied to military, aviation and space remote sensing area etc. The main characteristics and recent progresses of In1-xGaxAs short IR FPA detectors are introduced. The tendency that the response cutoff wavelength of InGaAs-based detectors is extended to the visible range is focused.
出处
《红外与激光工程》
EI
CSCD
北大核心
2007年第4期431-434,共4页
Infrared and Laser Engineering
