LaB_6电子枪的Kramers-Heisenberg散射与Fermi分布

Kramers-Heisenberg Scattering and Fermi Distribution in LaB_6 Electron Gun

分析了LaB6电子枪的Kramers-Heisenberg散射与电子束能量分布。以SDS-3电子束设备的电子枪为基础,加速电压为30 kV,通过双曲凹面加速器维纳尔(外敷碱土金属氧化物盖)使电子送达Si片靶心(置于光栏前),讨论了维纳尔的电子轨迹与电子枪发射电子的Fermi分布,给出了测量LaB6电子枪分辨率的方法。与考虑了系统像差影响的理论计算结果进行比较,两者的最后结果基本一致。

In LaB6 electron gun,Kramers-Heisenberg scattering and Fermi distribution are analyzed. Based on the electron gun of SDS-3 electron beam lithography machine,when the accelerating voltage is 30 kV,the requirements that the electron trajectories and potential distribution must be realized for concave hyperboloid Wehnelt （oxide-coated cover） of accelerator are discussed. Electrons from the gun will be accelerated by a high voltage and reach a target of silicon piece （Front the aperture） via the Wehnelt. Finally,a new method to measure the resolution of LaB6 electron gun is reported. The measurement results are basically the same theoretical calculation.