In_(1-x)Ga_xN/Si异质结太阳能电池的光伏特性研究

Photovoltaic properties of In_(1-x)Ga_xN/Si heterojunction solar cells

通过器件模拟对n-In1-xGaxN/p-Si异质结的光伏特性进行了研究,并与c-Si同质结薄膜电池的性能作了比较。研究表明:在AM1.5的光照条件下,n-IGN/p-Si异质结在最佳的电池设计、最佳的材料和最佳的操作参数条件下获得的电池效率达到了27%。电池效率受到薄膜质量的强烈影响,从电子亲和势、多数载流子的迁移率、少数载流子的寿命、薄膜厚度以及掺杂水平的变化可以得到说明。

Photovohaic properties of n-In1-xGaxN/p-Si hetero-junction have been studied by device simulation, and are compared with the performance of c-Si homo-junction thin film cells. Best achievable cell efficiency under AM1. 5 illumination condition was 27% for n-IGN/p-Si hetero- junction, on the condition of optimum cell design, materials and operation parameters. The cell efficiency is strongly affected by film quality, which can be accountable by variation of electron affinity, majority carrier mobility, minority carrier lifetime, film thickness and doping levels.