摘要
介绍了结构为ITO/4,4′,4"-tris{N,-(3-methylphenyl)-N-phenylamino}tripheny-lamine(m-MTDATA,40nm)/N,N′-diphenyl-N,N′-bis(1-naphthyl)-(1,1′-biphenyl)-4,4′-diamine(NPB,5nm)/4,4′-bis(2,2′diphenylvi-nyl)-1,1′-biphenyl(DPVBi,xnm)/5,6,11,12,-tetraphenylnaphthacene(Rubrene,0.5nm)/DPVBi(20nm)/tris(8-hydroxyquinoline)aluminum(Alq,45-xnm)/LiF(0.5nm)/Al的白光器件。采用了2个DPVBi层中间夹1个Rubrene的薄层,这种结构充分利用了DPVBi的空穴阻挡特性和发光特性,有力地平衡了来自于DPVBi的蓝光和Rubrene的黄光,从而使器件发出性能较好的白光。器件保持第2层DPVBi的厚度为20nm,第1层的DPVBi的厚度按照5、8、11和14nm的规律进行变化,相应改变Alq的厚度,使得这两者的总厚度为45nm保持不变。当第1层DPVBi的厚度是8nm、Alq的厚度是37nm和其它层的厚度保持不变时,在13V的电压下,器件的最大亮度为18710cd/m2,对应的效率为2.06cd/A,色坐标为(0.29,0.30),属于白光发射。
The article introduced the emitting white light devices whose structure is ITO/4,4' ,4'-tris{N,-(3-methylphenyl)- N-phenylamino} tfipheny-lamine(m- MTDATA ,40 nm)/N,N'-diphenyl-N,N'-his(1-naphthyl)-(1,1'-hiphenyl)-4,4'-diamine(NPB,5 nm)/4,4'-his(2,2'diphenyl vinyl)-1 ,1'-hiphenyl(DPVBi,x nm)/5,6,11,12,-tetraphenylnaphthacene(Rubrene, 0.5 nm)/DPVBi(20 nm)/tris(8-hydroxyquinoline) aluminum(Alq, 45 - x nm)/LiF(0. 5 nm)/Al. The device uses two DPVBi layer with clamping Rubrene thin layer. Such structures take full advantage of the hole blocked by DPVBi identity and luminous character,which strongly balance the blue-light from the DPVBi and the yellow-light from the Rubrene. Thus the device emits white light with better performance. The thickness of the second DPVBi layer is 20 nm,and the thickness of the first DPVBi layer is 5 nm, 8 nm, 11 nm, 14 nm, respectively, and the Alq thickness is correspondingly changed. Total thickness of second DPVBi layer and Alq is a constant of 45 nm. When the first layer thickness is 8 nm, the Alq thickness is 37 nm, other layer is constant,the device maximum brightness is 18 710 cd/m^2 and corresponding to the effidency of 2.06 cd/A in the voltage of 13 V and color coordinates of (0. 29,0.30) ,which bdongs to emitting white light.
出处
《光电子.激光》
EI
CAS
CSCD
北大核心
2007年第8期935-937,共3页
Journal of Optoelectronics·Laser
基金
吉林省科技发展计划资助项目(20050523)
吉林省教育厅科学发展计划资助项目(2003第25号)