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一种控制硅深刻蚀损伤方法的研究 被引量:2

Study on Methods to Protect Silicon Microstructures from the Damages in Deep Reactive Ion Etching
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摘要 提出了提高硅深反应离子刻蚀的新方法。该方法在硅的侧壁PECVD淀积SiO2,硅的底部采用热氧化的方法形成SiO2。由于在刻蚀中硅与SiO2的刻蚀选择比为120∶1-125∶1,因此SiO2层可以抑制在硅-玻璃结构的刻蚀中出现的lag和footing效应,扫描电镜结果也证明,采用改进工艺后的硅结构在经过长时间的过刻蚀后仍然保持了完整性。硅陀螺测试结果也证明了改进工艺的正确性。 New methods for improving the quality of the silicon deep reactive ion etching (DRIE) procedure were investigated. It suggested that a PECVD oxide layer was deposited at the silicon sidewall and a thermal oxide layer was formed at the silicon backside. Due to the siliconto SiO2 etching selectivity (120 : 1 ~125 : 1), these oxide layers could protect the silicon microstructures from the damages caused by the lag and footing effects usually occurred in the basic silicon-on- glass (SOG) process. The SEM result confirms that the silicon structure can endure a long time overetch and the structure surface can remain intact by the modified processes. The gyroscope device test results are also in good agreement with new process methods.
出处 《微纳电子技术》 CAS 2007年第7期37-39,共3页 Micronanoelectronic Technology
关键词 微电子机械系统 硅-玻璃阳极键合 硅深刻蚀 刻蚀损伤 MEMS silicon-glass anodic bonding silicon DRIE etching damage
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参考文献12

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同被引文献14

  • 1张洪海,苑伟政,马志波.一种硅深刻蚀中抑制Lag效应的新方法[J].航空精密制造技术,2010,46(3):9-11. 被引量:2
  • 2张鉴,黄庆安,李伟华.MEMS工艺中反应离子深刻蚀硅片的数值模型研究[J].传感技术学报,2006,19(05A):1426-1429. 被引量:7
  • 3Matsuuru T, Chahloz M,Jiao J , el al. A Melhod to Evade SiliconBackside Daniagt* in Deep Keaclive Ion Etching for AnodicallyBonded Galss- Silicon Structures [j]. Sensors and Actuators A:Physical,2001,89( 1-2):71-75.
  • 4Yoshida Y,Kumagai M , Tsutsumi K. Study of Silicon BacksideDamage in Deep Reactive Ion Elching: for Bonded Silicon-GlassStructures[j]. Microsystem Technologies,2003(9) : 167-170.
  • 5Kim K H, Kim S C, Park K \ , et al. OKIE Fabrication of Notch-Free Silicon Structures Using a Novel Silicon-on-Patterned Metalanti Glass Wafer [j ]. Journal of Micromechanics and Microengi-neering,201 1,21133(4):45018-45023.
  • 6Alper S E,Temiz Y,Akin T. A Compact Angular Rate Sensor Sys-tem Using a Fully Decoupled Silicon-on-Glass MEMS Gyroscope[j]. Journal of Microelectromechanical Systems, 2008, 17 (6):1418-1429.
  • 7Zhong W W, Han G W, Si C W, et al. Fabrication and Character-ization of an SOI MEMS Gyroscope [j]. Journal of Semiconduc-tors,2013,34(6) :58-62.
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  • 9章海锋,马力,刘少斌.磁化等离子体光子晶体缺陷态的研究[J].物理学报,2009,58(2):1071-1076. 被引量:16
  • 10冷悦,焦继伟,张颖,顾佳烨,颜培力,宓斌玮.微机械陀螺DRIE刻蚀过程中的局域掩膜效应[J].传感技术学报,2010,23(8):1070-1074. 被引量:2

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