摘要
以经典的频率特性模型为基础,针对两级运算放大器结构进行分析,提出一种改进的运算放大器小信号宏模型建立方法。给出一种模型可信度评估机制,并采用BSIM3V3MOSFET模型,对改进的运放小信号建模方法进行仿真验证。与经典建模方法对比结果表明,此方法模型符合度达到99.8%,易于软件集成,可有效缩短仿真时间。
An improved method of small-signal macro-model was presented for operational amplifier (OPA) on the basis of analyzing classical model in frequency domain. By evaluating the topology of two-stage OPA, a mechanism of the validity of model for OPA was proposed. The improved modeling approach was verified by simulation adopting 13SIM3V3 model for MOSFET. Compared with the classical modeling method, it achieves the accuracy of 99.8%. The improved approach exhibits its flexibility in soft integrity, and effectively shortens the time of simulation.
出处
《微纳电子技术》
CAS
2007年第7期51-55,共5页
Micronanoelectronic Technology
关键词
宏模型
集成电路
运算放大器
频率特性
macro model
integrated circuit
operational amplifier
frequency character