高响应度InGaAs PIN光电探测器的研制

Development of High Responsivity InGaAs PIN Photodetectors

分析了影响探测器响应度的各因素，在此基础上设计了InGaAs/InP PIN探测器的外延材料结构并优化了增透膜厚度和p-InP区欧姆接触电极图形的设计，以达到提高响应度的目的。采用MOCVD技术和闭管扩散等工艺制备了器件并测量了其响应度。结果显示，器件的光谱响应范围为1000-1600nm，在1500nm激光的辐照下，5V反向偏压时器件的响应度可达0.95A/W以上。

In order to improve the detectors responsivity, the thickness of antireflective film and the shape of p-InP ohmic contact electrode were optimized on the basis of analyzing the factors effecting on responsivity. The device was implemented by MOCVD and closed-capsule diffusion method and the spectral response was measured. The detectors show perfect responsivity at wavelengths from 1000 nm to 1600 nm. At the wavelength of 1500 nm and at 5 V reverse bias, the responsivity is over 0.95A/W.