摘要
介绍了一种新型的、利用并联梳齿结构驱动的静电型微继电器及其制造工艺。通过优化并联梳齿结构的几何尺寸,可以使微继电器的阈值电压降低到5V。该微继电器的主体部分使用一套表面牺牲层标准工艺制造,同时,使用溅射工艺制作Au接触电极,可以使接触电阻降到100mΩ以下,增加了微继电器的使用寿命。由于该微继电器的驱动电压和制造工艺都和普通集成电路的驱动电压和制造工艺相兼容,因此两者在产业化生产中可以很容易地被集成在同一芯片上。
A novel electrostatic microrelay with parallel-comb drive structure and its fabrication process were presented. By optimizing the structure of the design, 5V threshold voltage of the microrelay depending upon geometrical parameter choices was achieved. The main body of the microrelay was fabricated with a set of surface sacrificial standard process. Using sputtered Au as contact material, the contact resistance was reduced to 100 mΩ with the life time of the microrelay increased. Thus, the microrelay can be integrated with ICs on the same chip easily in industrial manufacture, since both the threshold voltage and the fabrication process of the microrelay are compatible with normal integrated circuits'.
出处
《微纳电子技术》
CAS
2007年第7期255-256,287,共3页
Micronanoelectronic Technology
基金
安徽省教育厅自然科学研究重点项目(2006KJ026A)