摘要
对于正面光入射的InP/InGaAs探测器,入射光会在空气、增透膜、InP盖层和InGaAs层之间发生多次反射。为了研究其对光响应度的影响,我们测量发现:探测器的光响应度会随探测波长出现非平坦的峰谷曲线,并且通过对该曲线上峰谷波长的简单数学处理,可以提取出已封装器件的结构参数和材料参数,而且这些参数与实验曲线符合得很好。利用该方法可以简单方便地提取出已封装器件的实际结构参数和材料参数。
In a front-illuminated InP/InGaAs detector, there are multi-layer reflections of incident light among the air, reflection reducing coating, InP capping layer and InGaAs layer. After performing experiments for analyzing its effect on the photo responsivity,we found that the photo responsivity of InP/InGaAs detector with wavelengths showed a non-flat curve. And by mathematical treatment for the peaks and valleys of the curve,we can extract the packaged device parameters that fit the experimental curve better and these parameters can match the experimental curve more closely. By this way, we can extract a packaged device＇s true structure parameters and material parameters simply and accurately.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2007年第4期464-466,470,共4页
Semiconductor Optoelectronics
基金
北京市自然科学基金项目(21002015200501)
教育部出国留学人员基金资助项目(63002015200401)
关键词
探测器
光响应度
多层反射
拟合
detector
photo responsivity
multi-layer reflection
regression
