摘要
报道利用低压金属有机化学气相沉积（LP－MOCVD）技术在（001）InP衬底上生长InAs自组装量子点的结果，用光致发光技术观察到较强的室温光荧光谱，其峰值波长约为1603um，分布在1300um^1700um范围内。
The present paper covers the results of room temperature photoluminescence (PL) emis-sion from InAs self-assembled quantum dots (QDs) in the 1 300 nm^1700 nm spectral region. The low pressure MOCVD was used to grow lnAs QDs on an InP substrate. Preliminary characterization was performed using PL and scanning electron microscopy (SEM). PL peaks are centered at 1 603nm, the full width at half-maximum (FWHM) is about 80 meV.
出处
《吉林大学自然科学学报》
CAS
CSCD
1997年第2期70-72,共3页
Acta Scientiarum Naturalium Universitatis Jilinensis
基金
集成光电子学国家重点实验室基金
