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A Novel Fully-Depleted Dual-Gate MOSFET

一种新型全耗尽双栅MOSFET(英文)
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摘要 A novel fully-depleted dual-gate MOSFET with a hetero-material gate and a lightly-doped drain is proposed. The hetero-material gate, which consists of a main gate and two side-gates,is used to control the surface potential distribution. The fabrication process and the device characteristics are simulated with Tsuprem-4 and Medici separately. Compared to a common DG fully depleted SO1 MOSFET,the proposed device has much higher on/off current ratio and superior sub-threshold slope. The on/off current ratio is about 10^10 and the sub-threshold slope is nearly 60mV/dec under a 0.18μm process. 提出一种新型全耗尽双栅MOSFET,该器件具有异质栅和LDD结构.异质栅由主栅和两个侧栅组成,分区控制器件的沟道表面势垒.通过Tsuprem-4工艺模拟和Medici器件模拟验证表明,与普通双栅全耗尽SOI相比,该器件获得了更好的开态/关态电流比和亚阈值斜率.在0.18μm工艺下,开态/关态电流比约为1010,亚阈值斜率接近60mV/dec .
作者 张国和 邵志标 韩彬 刘德瑞
机构地区 西安交通大学电子科学与技术系
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第9期1359-1363,共5页 半导体学报（英文版）
关键词 hetero-material gate on/off current ratio sub-threshold slope SOI FET 异质栅 关态电流 亚阈值斜率 SOI场效应晶体管
分类号 TN386.1 [电子电信—物理电子学]
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参考文献20

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Journal of Semiconductors
2007年 第9期

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