掺Er HfO_2薄膜材料的光致发光性质

Photoluminescence Properties of Er-Doped HfO_2 Films

用脉冲激光淀积(PLD)技术和离子注入的方法制备了掺Er氧化铪(HfO2)薄膜样品,观察到了样品中Er离子波长1535nm的室温和变温光致发光(PL)现象.分析了后期不同的退火温度对样品发光强度的影响,发现当退火温度选取800℃时可最大程度减少材料中的晶格损伤和缺陷等非辐射衰减中心,同时光激活Er离子,从而实现最大强度的光致发光.通过对样品光致发光激发(PLE)的测量分析发现,在Er离子的发光过程中除了直接吸收的过程之外还存在着间接激发的过程.HfO2将会成为Er掺杂的一种很好的基质材料.

Er-doped HfO2 films were grown by pulsed laser deposition （PLD） and ion implantation. The room-temperature and varied-temperature PL spectra were observed. By analyzing the PL peak intensity of Er^3＋ at 1535nm as a function of annealing temperature,we found that annealing at 800℃ can reduce the nonradiative decay channels in HfO2 films such as implantation-induced defects and optically activate Er ions at best, causing the strongest photoluminescence. The PL excitation spectrum of Er^3＋ in HfO2 film at room temperature shows that there is also indirect excitation besides the direct excitation during the light-emitting process of Er^3＋ . HfO2 films will be a good host material for Er implantation.