摘要
研究了总栅宽为100μm栅凹槽结构的AlGaN/GaN HFET,采用相同的外延材料,凹槽栅结构器件与平面栅结构器件比较其饱和电流变化小,跨导由260.3mS/mm增加到314.8mS/mm,n由2.3减小到1.7,栅极漏电减小一个数量级.在频率为8GHz时,负载牵引系统测试显示,当工作电压增加到40V,输出功率密度达到11.74W/mm.
A recessed gate A1GaN/GaN HFET with a total gate length of 100μm is studied. The device demonstrates an increase in transconductance from 260.3 to 314.8mS/mm compared to the unrecessed device, while the saturation current changes slightly. Moreover,the ideality is improved from 2.3 to 1.7. An output power density of 11.74W/mm is achieved at 8GHz and 40V using a load pull system.
