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单片集成0·8μm栅长GaAs基InGaP/AlGaAs/InGaAs增强/耗尽型赝配高电子迁移率晶体管 被引量：1

Monolithic Integration of 0.8μm Gate-Length GaAs-Based InGaP/AlGaAs/InGaAs Enhancement-and Depletion-Mode PHEMTs
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摘要 优化了GaAs基InGaP/AlGaAs/InGaAs赝配高电子迁移率晶体管(PHEMT)的外延结构,有利于获得增强型PHEMT的正向阈值电压.采用光学接触式光刻方式,实现了单片集成0.8μm栅长GaAs基InGaP/AlGaAs/In-GaAs增强/耗尽型PHEMT.直流和高频测试结果显示:增强型(耗尽型)PHEMT的阈值电压、非本征跨导、最大饱和漏电流密度、电流增益截止频率、最高振荡频率分别为0.1V(-0.5V),330mS/mm(260mS/mm),245mA/mm(255mA/mm),14.9GHz(14.5GHz)和18GHz(20GHz).利用单片集成增强/耗尽型PHEMT实现了直接耦合场效应晶体管逻辑反相器,电源电压为1V,输入0.15V电压时,输出电压为0.98V;输入0.3V电压时,输出电压为0.18V. The material structure of GaAs-based InGaP/AlGaAs/lnGaAs PHEMTs was optimized to obtain the positive threshold voltage of an enhancement-mode PHEMT. Contact-mode photolithography was used for realizing the monolithic integration of 0. 8μm gate length GaAs-based InGaP/AlGaAs/InGaAs enhancement- and depletion-mode PHEMTs. Excellent DC and high frequency performance are achieved. VT, gm, JDSS, fT, and fmax are 0.1V, 330mS/mm, 245mA/mm, 14.9GHz, and 18GHz for E-mode PHEMTs, and - 0. 5V, 260mS/mm, 255mA/mm, 14.5 GHz, and 20GHz for D-mode PHEMTs, respectively. DCFL inverters based on monolithic integration of GaAs-based InGaP/AlGaAs/InGaAs enhancement- and depletionmode PHEMTs are fabricated. The supply voltage is 1V. When the input voltages are 0. 15 and 0. 3V,the output voltages are 0. 98 and 0.18V, respectively.
作者 徐静波 张海英 尹军舰 刘亮 李潇 叶甜春 黎明
机构地区 中国科学院微电子研究所
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第9期1424-1427,共4页 半导体学报（英文版）
基金 国家自然科学基金(批准号:60276021) 国家重点基础研究发展规划(批准号:2002CB311901)资助项目~~
关键词 单片集成 增强型 耗尽型 赝配高电子迁移率晶体管 阈值电压 monolithic integration enhancement-mode depletion-mode PHEMT threshold voltage
分类号 TN386 [电子电信—物理电子学]
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参考文献8

  • 1Xu D,Suemitsu T,Osaka J,et al.Depletion-and enhancement-mode modulation-doped field-effect transistors for ultrahigh-speed applications:an electrochemical fabrication technology.IEEE Trans Electron Devices,2000,47 (1):33.
  • 2Wohlmuth W A,Leibl W,Juneja V,et al.E-/D-pHEMT technology for wireless components.IEEE CSIC Digest,2004:115.
  • 3Tsai M K,Tan S W,Wu Y W.Depletion-mode and enhancement-mode InGaP/GaAs δ-HEMTs for low supply-voltage applications.Semicond Sci Tchnol,2002,17:156.
  • 4Nooshabadi S,Montiel-Nelson J A.Fast feedthrough logic:a high performance logic family for GaAs.IEEE Trans Circuits Syst Ⅰ,2004,51(11):2189.
  • 5Ren F,Pearton S J,Kopf R F.AlGaAs/GaAs based HEMTs,inverters and ring oscillators with InGaAs and etch-stop layers.Electron Lett,1991,27(13):1175.
  • 6Tanaka K,Shikata M,Kimura T.8Gb/s 8∶1 multiplexer and 1∶8 demultiplexer IC's using GaAs DCFL circuit.IEEE J Solid-State Circuits,1992,27(10):1359.
  • 7李海鸥,张海英,尹军舰,叶甜春.Monolithic Integration of InGaP/AlGaAs/InGaAs Enhancement/Depletion-Mode PHEMTs[J].Journal of Semiconductors,2005,26(12):2281-2285. 被引量：1
  • 8李海鸥,尹军舰,张海英,和致经,叶甜春.一种在砷化镓上形成欧姆接触的新型六层金属系统(英文)[J].电子器件,2006,29(1):9-11. 被引量：2

二级参考文献15

  • 1Wantabe Y, Kajll K, Asada Y, et al. A high-speed HEMT 1.5K gate array. IEEE Trans Electron Devices, 1987 ,ED-34 :1253.
  • 2Chan Y J, Yang M T. Enhancement and depletion-mode AlGaAs/In0.15 Ga0.85 As HEMTs fabricated by selective ion implantation. Electron Lett, 1993,29 (25) : 2220.
  • 3Tong M, Nummila K, Seo J W, et al. Process for enhancement/depletion-mode GaAs/InGaAs/AIGaAs pseudomorphic MODFETs using selective wet gate recessing. Electron Lett,1992,28(17) : 1633.
  • 4Mahajan A,Fay P, Arafa M, et al. Monolithic integration of InAlAs/InGaAs/InP enhancement-and depletion-mode high electron mobility transistors. IEDM, 1996 : 51.
  • 5Chertouk M, Burkner S, Bachem K, et al. Advantages of Al-free GaInP/InGaAs PHEMTs for power applications. Electron Lett,1998,34(6) :590.
  • 6Geiger D, Mittermeier E, Dickmann J, et al. InGaP/InGaAs HFET with high current density and high cut-off frequencies. Electron Lett, 1995,16(6) : 259.
  • 7Tsai M K,Tan S W, Wu Y W, et al. Depletion-mode and enhancement-mode InGaP/GaAs-HEMTs for low supply-voltage applications. Semicond Sci Technol, 2002,17 : 156.
  • 8Dumka D C, Hoke W E, Lemonias P J, et al. High performance 0.35μm gate-length monolithic enhancement/depletionmode metamorphic In0. 52 Al0.48 As/In0. 53 Ga0.47As HEMTs on GaAs substrate. IEEE Trans Electron Devices, 2001,22(8) :364.
  • 9Goronkin Herb,Tehrani Saied,Remmel Tom,Fejes Peter L and Johnson Karl J.Ohmic Contact Penetration and Encroachment in GaAs/AlGaAs and GaAs FET's[J].IEEE Transactions on Electron Devices.February 1989,36(2):281-288.
  • 10Kuan T S,Batson P E,Jackson T N,Rupprecht H,and Wilkie E L.Electron Microscope Studies of an Alloyed Au/Ni/Au-Ge Ohmic Contact to GaAs[J].J Appl Phys,December 1983,54(12),6952-6957.

共引文献1

同被引文献8

  • 1Masuda M,Ohbata N, Ishiuchi H,et al. High power heterojunction GaAs switch IC with PIdB of more than 38dBm for GSM application. IEEE GaAs IC Symposium Digest, 1998:229
  • 2Narayama A, Mmeshima M N. Low-insertion-loss DP3T MMIC switch for dual-band cellular phones. IEEE J Solid-State Circuits, 1999,34(8) : 1051
  • 3Makioka S, Anda Y, Miyatsuii K, et al. Super self-aligned GaAs RF switch IC with 0. 25dB extremely low insertion loss for mobile communication systems. IEEE Trans Electron Device, 2001,48 (8) : 1510
  • 4Tosaka H, Fujii T, Miyakoshi K. An antenna switch MMIC using E/D mode p-HEMT for GSM/DCS/PCS/WCDMA bands application.2003 IEEE Radio Frequency Integrated Circuits Symposium, 2003 : 518
  • 5Hower P L, Bechtel N G. Current saturation and small signal characteristics of GaAs field-effect transistors. IEEE Trans Electron Devices, 1973, ED-20 : 1213
  • 6Tsutsumi T, Kawaoka Y, Katamata T. A single-chip PHS frontend MMIC with a true single + 3V voltage supply. IEEE Radio Frequency Integrated Circuits Symposium, 1998 : 105
  • 7Li Haiou, Zhang Haiying, Yin Junjian, et al. Monolithic integration of InGaP/AIGaAs/InGaAs enhancement/depletion-mode PHEMTs. Chinese Journal of Semiconductors,2005,26(12) :2281
  • 8Chan Y J, Yang M T. Enhancement and depletion-mode AIGaAs/ In0.15Ga0.85As HEMTs fabricated by selective ion implantation. Electron Lett, 1993,29(25) :2220

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Journal of Semiconductors
2007年 第9期

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