摘要
首先介绍了InGaAs台面探测器的研究进展,然后为了验证利用台面结制作背照射器件的可行性,利用分子束外延(MBE)方法生长的掺杂InGaAs吸收层PIN InP/InGaAs/InP双异质结外延材料,通过台面制作、钝化、电极生长、背面抛光等工艺,制备了8元台面InGaAs探测器,并测试了正照射和背照射时,器件的I-V、信号和响应光谱。测试结果表明,正照射和背照射情况下,器件的响应信号差别不大,正照射下器件的平均峰值探测率为4.1×1011cm.Hz1/2.W-1,背照射下器件的平均峰值探测率为4.0×1011cm.Hz1/2.W-1,但背照射情况下器件的响应光谱在短波方向有更好的截止。
The development of InGaAs mesa detectors were presented briefly, then in order to verify the feasibility of fabricating back-illuminated detectors by mesa junction, 8 × 1 elements mesa InGaAs detector arrays were made based on doped-InGaAs absorbing layer in MBE-grown PIN InP/InGaAs/InP double-heterostructure epitaxial materials, with the technics of mesa-making, passivation, growth of electrode, backside polishing and so on. Ⅰ-Ⅴ curves, response spectra and the signal of the detector were measured at the front-illuminated or back-illuminated condition. The resuits indicate that the signal is almost same at the front-illuminated and back-illuminated condition. The mean peak detectivity is 4.1 × 10^11cm · Hz^1/2 · W^-1 at the front-illuminated condition while it is 4.0 × 10^11cm · Hz^1/2 · W^-1 at the back-illuminated condition, but the response spectra of the detectors has better cut-off characteristic at the back-illuminated condition.
出处
《激光与红外》
CAS
CSCD
北大核心
2007年第B09期938-940,共3页
Laser & Infrared
基金
国家自然科学基金重点项目(No.50632060)
