摘要
通过(NH4)2S湿法硫化InGaAs表面,利用微波反射光电导衰减法测量了经(NH4)2S硫化后的少数载流子寿命。结果显示,经过硫化处理后的InGaAs表面复合速度接近于理想的InP/InGaAs双异质结材料的界面复合速度。为了更好地表征钝化效果,在硫化后的InGaAs表面淀积SiNx制备了M IS结构,通过高低频C-V测试得出两者的界面态密度为8.5×1010cm-2.eV-1。
The minor carrier lifetime of InGaAs （ 100 ） after treatment with （ NH4 ）2 S solution was measured by the microwave photoconductivity decay （μ-PCD）. The result shows that SRV of the InGaAs after treatment with （NH4） 2 S solution approach that of the nearly ideal InP/InGaAs interface. For better evaluating effect of sulfur, SiNx is deposited on surface of the InGaAs for fabricating MIS. Through measuring the C-V properties, the statement of interface is confirmed.
出处
《激光与红外》
CAS
CSCD
北大核心
2007年第B09期944-946,共3页
Laser & Infrared
