摘要
从微观粒子的相互作用和输运出发，探讨靶溅射过程中的基元化学物理步骤，计算了溅射速率和离子能量分布，为深入研究溅射薄膜的生长速率和靶中毒奠定基础。
The elementary chemicophysical processes are studied by the micro-particles in-teraction and transportation, and the sputtering rate and energy distribution of theions are also calculated. The results give the basis for further studies of the growingrate of sputtering thin film and the target poisoning.
出处
《微细加工技术》
1997年第1期41-46,共6页
Microfabrication Technology
基金
国家自然科学基金
关键词
反应溅射
薄膜
靶动力学
氮化钛
reaction sputtering
TiN thin film
target kinetics
