摘要
从靶动力学和粒子输运导出了靶中毒的判据．建立的靶中毒模型能体现工艺参数对靶中毒的影响，从而对解决薄膜高速生长与组份匹配的矛盾，为设计新型无中毒反应室提供了理论依据。
The criterion of the target poisoning is. deduced from the target kinetics and theparticle transport process. The constructed poisoning model describes the effect ofprocessing parameters on target poisoning. The model provides the theoritical basis tosolve the contradiction between high growth rate and compositions matching of thefilm and to design novel poisoning-free reaction chamber.
出处
《微细加工技术》
EI
1997年第1期53-59,共7页
Microfabrication Technology
基金
国家自然科学基金
关键词
反应溅射
薄膜
靶中毒
氮化钛
reaction sputtering
TiN film
target poisoning
