激光制备多层铁电薄膜的C-V保持特性研究

Retention Characteristics of BIT/PZT/BIT Multilayer Ferroelectric Thin Films Prepared by Laser

采用脉冲准分子激光工艺在Ｓｉ（１００）单晶基片上，成功地淀积了ＢＩＴ、ＰＺＴ／ＢＩＴ和ＢＩＴ／ＰＺＴ／ＢＩＴ等多层结构的铁电薄膜。通过测量金属／ＢＩＴ／ＰＺＴ／ＢＩＴ／Ｓｉ多层结构的非回线型Ｃ－Ｖ特性曲线、电容与保持时间的关系，发现三层ＢＩＴ／ＰＺＴ／ＢＩＴ薄膜具有很好的电容保持特性。

The Bi 4Ti 3O 12 (BIT)/PbZr 0 4 Ti 0 6 O 3(PZT)/BIT,BIT/PZT/BIT ferroelectric thin films were successfully deposited on p Si(100) at 680 °C (BIT)and 530 °C(PZT) in an ambient pressure of 27 Pa by pulsed excimer laser.The capacitance retention characteristics of metal/BIT/PZT/BIT multilayer structure were studied through the measurement of nonloop C V characteristics,and the relation of capacitance with retention time. The results show that the three layer BIT/PZT/BIT thin film is a promising gate insulater for ferroelectric field effect transistors(FFETs),because the capacitance retention property of BIT/PZT/BIT is much better than those of BIT and PZT/BIT thin films.