摘要
以光热电离光谱方法指证了减压充氮气氛下生长的微氮直拉硅单晶中的氮关浅施主NRD（NitrogenRelatedDonor）．确认NRD的形成温区为300～800℃，900℃以上退火将被不可逆消除．指出NRD可能有N－O复合体和氧凝聚态浅施主两种形式，各有不同的热处理行为．
:PTIS method is taken to indicate the presence of nitrogen related donor(NRD)in nitrogen doped CZ-Si grown under high purity nitrogen atmosphere at reduced pressure.It is confirmed that NRD are generated between 300～800℃, and can be unreversibely annihilated under 900℃ heat-treament. N-O complex and oxygen agglomeration may be two origins of NRD, each has different heat treatment behavior.
