摘要
用低压MOVPE方法研制出了波长为650nm与670nm的GaInP－AlGaInP半导体量子阱可见光激光器，并已形成一定批量生产能力，批量生产的670nm与650nm半导体量子阱可见光激光器的阈值电流典型值为35mA，额定输出光功率不小于5mw，标称工作温度不低于50℃，预计20℃时寿命接近100000小时，主要技术指标达到目前进口同类产品水平，完全可以满足实用要求。
GaInP-AlGaInP quantum well visible laser diodes with wavelength of 650nm and 670nm have been successfully developed. A biaxial compressive strain is employed in GaInP well to lower threshold current. The typical threshold current of the laser diode is about 35mA(25℃, CW). The lowest threshold current is 13mA. The minimum operating current and operating voltage at the CW output of 5mW are 23mA and 2. 15V respectively, which results in a marked reduction of power consumption. A maximum CW temperature of 100℃ (670nm)and maximum output power of 22mW have been realized. Estimated lifetimes of more than 10,000h were obtained at 3mW, 25℃.
基金
国家"863"高技术计划资助
关键词
激光器
半导体激光器
量子阱
可见光
Metallorganic vapor phase epitaxy
Quantum well lasers
Semiconducting gallium compounds
Semiconductor lasers
