P^+-Ge_xSi_(1-x)/P-Si异质结内光发射(HIP)长波长红外探测器结构的改进及其在77K下的特性

Improvement on Structure of P^+-Ge_xSi_(1-x)/P-Si Heterojunction Internal Photoemission Long-Wavelength Infrared Detectors and its Characteristics at 77K

本文对P+GexSi1-x／P－Si异质结内光发射长波长红外探测器的电极结构进行了改进，并在国内首次报道了这种器件在77K下的电学特性和光学响应特性。

The electrode structure of P+-GexSi1-x/P-Si heterojunction internal photoemission long-wavelength infrared detector is improved and the electrical and photo-responsible characteristics of this kind of device at 77K are reported for the first time in China.