摘要
分析研究了注F场氧MOSFET的辐射响应特性，结果表明，由于F离子具有负电中心、替换部分弱键和应力健等的作用，导致含F场氧介质具有很强的抑制电离辐射损伤的特性。场氧厚度与辐射损伤直接相关连，而沟道宽度对辐射损伤的影响不大。
γ irradiation responses of fluorinated N channel and P channel field oxide MOS-FETs have been investigated. The formation of radiation-induced oxide trapped charges and interface traps in field oxide has been restrained because of F similar to the electron traps、the replacement of some weak and strain bonds by Si-F bonds. The field oxide depth is related to the radiation damage.
