摘要
MOSFET栅介质层厚度的减薄使栅致漏极的泄漏（GIDL）电流指数增强，本文报道N2O中退火SiO2（两步法）生成超薄（5．5nm）氮氧化硅（SiOxNy）栅NMOSFET中的GIDL效应，包括器件尺寸、偏置电压和热载流子效应的影响．发现GIDL在一定的偏置下成为主要的泄漏机制，且陷阱电荷和界面态对其具有显著的调制作用．二维器件模拟结果指出，与SiO2栅NMOSFET相比，LDD掺杂结构使SiOxNy栅NMOSFET的GIDL进一步增强．
The gate-induced drain leakage (GIDL) current is increased exponentially with the reduction of the gate insulator thickness. This paper investigates the different factors affecting the GIDL of NMOSFET's with 5.5nm gate oxynitrides fabricated by annealing SiO2 in N2O, including the device dimensions, biasing configurations and hot-carrier stressing. It is discovered that the GIDL can impose a major leakage concern under certain bias conditions for thin gate MOSFET's and can be significantly modulated by trapped charges and interface states. 2D device simulation reveals that the lightly-doped drain (LDD) structure aggravates this leakage mechanism in oxynitrides as compared with that in SiO2 gate MOSFET's.
基金
国家教委博士后基金
国家05攻关资助
