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三极管β值对电压放大倍数的影响新探 被引量:2

Discussion about Effect of β of Transistors on Voltage Gain
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摘要 一般电子技术教材认为,在单级共发射极放大电路中,改变三极管的β值对电压放大倍数的影响不明显。即当增大(或减小)β值时,在静态发射极电流IE不变的情况下,电压放大倍数不会明显增大(或减小)。然而IE能否保持不变?与哪些因素有关?若IE发生了改变结果又会怎样?这些问题一般教材均未给予讨论。这些问题不讨论清楚,很容易在分析电路时出现错误。对以上问题进行了分析讨论并运用实验方法加以验证,最终得出明确结论。 Most of the electronics textbooks think that the change of transistor parameter current amplification factor β can cause little change of voltage gain in one - stage common emitter configuration amplifiers. That is to say under the condition of constant static emitter current when the β is increased (or decreased),the voltage gain will not be increased (or decreascd) clearly. However,can IE be kept constantly? Which factors do it related to? If Ie can't keep constant,what the result will be? All of these questions aren't discussed in common textbooks. If we don't know the answers of the questions,it's easy to make mistakes while analyzing the amplification circuits. The above mentioned questions will be analyzed and discussed thoroughly and the conclusions will be reached clearly in this paper. Yet,experiments are used to prove the conclusions.
作者 赵笑畏
出处 《现代电子技术》 2007年第18期166-168,共3页 Modern Electronics Technique
关键词 单级共发射极放大电路 电流放大系数声值 电压放大倍数 静态发射极电流IE one- stage common emitter amplification circuit current amplification factor β voltage gain static emitter cur rent Ie
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参考文献1

  • 1康华光.电子技术基础[M].5版.北京:高等教育出版社,2003.

同被引文献9

  • 1童诗白,华成英.模拟电子技术基础[M].4版.北京:高等教育出版社,2006.
  • 2HO T J, CHENG H L, CHIU L Y, et al. Temperature- dependent ambipolar electrical characteristics of pentacene-based thin-film transistors: the impact of op- posite-sign charge carriers [ J ]. Organic Electronics, 2015 (25): 74-78.
  • 3MANOLI K, PATRIKOUSSAKIS M M, MAGLIULO M, et al. Pulsed voltage driven organic field-effect transistors for high stability transient current measurements [ J ]. Organic Electronics, 2014, 15 (10): 2372-2380.
  • 4GJB128A一1997,半导体分立器件试验方法[s].北京:中国标准出版社,1997:1-5.
  • 5GBT4587-1994,半导体分立器件和集成电路[s].北京:中国标准出版社,1994:42-50.
  • 6单尼娜,吕长志,马卫东,李志国,郭春生.直流和脉冲工作的VDMOS可靠性试验[J].半导体技术,2010,35(2):172-175. 被引量:5
  • 7单祥茹.基础元件介绍——晶体三极管[J].中国电子商情,2011(6):69-73. 被引量:3
  • 8顾占彪,王淼.GaAs FET脉冲功率放大器输出脉冲包络分析研究[J].半导体技术,2013,38(6):474-478. 被引量:3
  • 9郝新雷,刘海微,吴雷.三极管放大倍数的脉冲测试[J].国外电子测量技术,2013,32(10):34-37. 被引量:8

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