摘要
主要分析了不同工艺参数对于刻蚀图形的影响，包括刻蚀侧壁角度，刻蚀表面平整度，选择比，侧向钻蚀等几个方面，及ICP刻蚀对激光器性能的影响，通过对翔蚀图形的控制，使2寸片内均匀性〈±5％，侧壁角达到79°～81°。
Mainly analyze the influence of the etching figure due to the different craft parameter, including etched profile, smoothness of the side wall and floor surfaces, selectivity, linewidth loss and so on, and influence of performance of laser diode by IC Petching. By controlling of the etched figure, implement the homogeneity of 2＂ substrate 〈±5% ,profile 79°-81°.
出处
《中国材料科技与设备》
2007年第5期101-103,共3页
Chinese Materials Science Technology & Equipment
关键词
ICP
选择比
侧向钻蚀
刻蚀损伤
Inductively coupled plasma
Selectivity
Linewidth loss
Etching damage
