摘要
用电子陶瓷工艺制备(V2O5,Ta2O5)双掺杂的WO3电子陶瓷,研究了(V2O5,Ta2O5)双掺杂对WO3陶瓷的微观结构与电学行为的影响。X射线衍射结果表明,(V2O5,Ta2O5)双掺杂能明显抑制WO3中三斜相的形成,使WO3陶瓷单相化。I-V特性测试表明,掺杂V2O5和Ta2O5后,陶瓷的压敏电压明显增大,非线性系数显著减小。
Tungsten trioxide （WO3） ceramics doped with vanadic pentoxide （V2O5）and tantalum pentoxide （Ta2O5） was prepared by conventional electronics ceramics method and effect Of doping material on microstructure and electrical properties of tungsten trioxide （WO3） ceramics. X-ray diffraction（XRD） revealed that anorthic crystal in tungsten trioxide （WO3） ceramics was restrained to appear due to doping material, only single phase consist in WOa ceramics. The result of I-V test indicated that voltage-sensitive voltage （UlmA） of （V2O5, Ta2O5）-doped tungsten trioxide （WO3） ceramics obviously augment but non-linear coefficient was reduced.
出处
《电工材料》
CAS
2007年第3期27-29,共3页
Electrical Engineering Materials
