表面处理对HfO_2栅介质MOS电容界面特性的影响

Improvements of Interfaces Properties of HfO_2 Gate Dielectric MOS Capacitors by Surface Pre-treatments

在溅射淀积HfO2栅介质之前,采用NO、N2O、O2+CHCCl3(TCE)进行表面预处理。结果表明,预处理能改善界面和近界面特性,减小界面层厚度,尤其是新颖的TCE+少量O2的表面处理工艺,能有效抑制界面层的生长,大大降低界面态密度,减小栅极漏电流。其机理在于TCE分解产生的Cl2和HCl能有效地钝化界面附近Si悬挂键和其它结构缺陷,并能去除离子污染。

The effects of various pre-deposition surface treatments such as NO-annealed, N2O-annealed and O2＋trichloroethylene （TCE） on the interfaces properties are investigated. The TCE technique is superior to the others because the dielectric subject to TCE surface treatments possesses a tremendously reduced interface-state density and effective oxide thickness.