环栅CMOS/SOI的X射线总剂量辐射效应研究

X-ray Total Dose Radiation Effect on CMOS/SOI with Enclose-gate Structure

采用硅离子注入工艺对注氧隔离(SIMOX)绝缘体上硅(SOI)材料作出改性,分别在改性材料和标准SIMOXSOI材料上制作部分耗尽环型栅CMOS/SOI器件,并采用10keVX射线对其进行了总剂量辐照试验。实验表明,同样的辐射总剂量条件下,采用改性材料制作的器件与标准SIMOX材料制作的器件相比,阈值电压漂移小得多,亚阈漏电也得到明显改善,说明改性SIMOXSOI材料具有优越的抗总剂量辐射能力。

Silicon ion implantations was used to improve SIMOX SOI substrate. Partially-depleted CMOS/SOI devices with enclose-gate structure were fabricated on improved SIMOX substrate and standard SIMOX substrate. 10 keV X-ray test was performed and the results demonstrate that the improved CMOS/SOI devices have less threshold voltage shifts and have smaller leakage current after the same total dose irradiation as compared to standard CMOS/SOI devices.