摘要
研究了国产结构参数近似的SiGe HBT与Si BJT在60Coγ射线辐照前和不同剂量辐照后性能的变化,并作了比较。辐照后集电极电流Ic变化很小,基极电流Ib明显增大,表明辐照后电流增益的下降主要是由于Ib的退化所导致。当辐照剂量达到10kGy(Si)时,SiGe HBT和Si BJT的最大电流增益分别下降为77%和55%,表明了SiGe HBT具有比Si BJT更好的抗γ射线辐照性能。对辐射损伤机理进行了探讨。
The total dose radiation effects on SiGe HBT and Si BJT were studied and then compared. It is shown that Ic changes slightly while Ib increases obviously with increasing dose. Thus the degradation of β is dominated by the increasing Ib. The SiGe HBT maintained 77% of peak current gain after 10 kGy（Si）, while Si BJT degraded to 55% of peak current gain. The results show that SiGe HBT has much better resistance to Gamma irradiation than Si BJT.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2007年第3期317-319,355,共4页
Research & Progress of SSE
