驱动与信号隔离的单刀双掷RF MEMS开关

The SPDT RF MEMS Switch with Isolation between Bias and Signal

设计了一种基于横向金属接触的DC-5 GHz单刀双掷RF MEMS开关,该开关包括一套有限地共面波导(FGCPW)传输线和左右摆动的悬臂梁。利用绝缘的介质层实现了驱动信号与射频信号的隔离,提高了开关的性能。根据开关的拓扑结构,提出相应的等效电路,并据此实现开关射频性能的优化设计。开关利用MetalMUMPs工艺实现,测试结果显示,该开关在5GHz的插入损耗为0.8dB,回波损耗大于20dB,隔离度为40dB。测得开关的开启电压为59V。

A DC-5 GHz single-pole double-throw （SPDT） radio frequency micro-electro-mechanical systems （RF MEMS） switch that employs lateral metal-metal contacting is designed. It consists of a set of quasi-finite ground coplanar waveguide （FGCPW） transmission lines and a left right swing cantilever beam. The use of an insulation dielectric layer provides the isolation between bias and RF signal. According to different states of switch, relevant equivalent circuit models are investigated to optimize switch performance. The devices have been successfully fabricated using the MetalMUMP＇ s process. The measurement results show an isolation of 40 dB at 5 GHz. The insertion loss of the switch is 0. 8 dB and return loss is 20 dB at 5 GHz. The threshold voltage is about 59 V.