期刊文献+

采用多输入浮栅MOS器件的四值编-译码电路设计 被引量:1

Quaternary Encoder and Decoder Circuits Using Multiple-input Floating-gate MOS Transistors
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摘要 提出一种采用多输入浮栅MOS管设计具有可控阈值功能的电压型多值逻辑电路的方法.对每个浮栅MOS管的逻辑功能均采用传输开关运算予以表示以实现有效综合。在此基础上提出了一种新的电压型多输入浮栅MOS四值编码器和译码器设计。所提出的电路在结构上得到了非常明显的简化,并可采用标准的双层多晶硅CMOS工艺予以实现。此外,这些电路具有逻辑摆幅完整、延迟小等特点。采用TSMC0.35μm双层多晶硅CMOS工艺参数的HSPICE模拟结果验证了所提出设计方案的正确性。 A design method for voltage-mode multiple-valued logic (MVL) circuits using multiple-input floating-gate MOS(FGMOS) transistors with threshold-controllable function was presented. The logical relation of each floating-gate MOS transistor was formulated by using the transmission operation in order to make effective and practical use of the circuits. By employing the voltage-threshold controlling technique, novel voltage-mode quaternary encoder and decoder using multiple-input floating-gate MOS transistors were designed. The important advantages of the proposed circuits are that they can be implemented by a standard double-polysilicon CMOS process, and are considerable simpler configuration than previously reported ones. Furthermore, they have some other favorable properties including full logic swing and low propagation delay. From the HSPICE simulation results using TSMC 0.35μm double-polysilicon CMOS technology, the effectiveness of the proposed approach is validated.
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2007年第3期421-426,共6页 Research & Progress of SSE
基金 浙江省自然科学基金资助项目(Y105124 Y106375)
关键词 多值逻辑 浮栅金属氧化物半导体器件 控阈技术 编码-译码电路 multiple-valued logic floating-gate MOS device threshold-controllable tech- nique encoder-decoder circuit
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参考文献13

  • 1Philippe J M, Pillement S, Sentieys O. A low-power and high-speed quaternary interconnection link using efficient converters[C]. Proc of the IEEE International Symp on Circuits and Systems, 2005:4 689-4 692.
  • 2Thoidis I M, Soudris D, Karafyllidis I, et al. The design of low-power muhiple-valued logic encoder and decoder circuits[C]. Proc of the IEEE International Conf on Electronics, Circuits and Systems, 1999,3: 1 623-1 626.
  • 3Shanbhag N R, Nagchoudhuri D, Siferd R E, et al. Quaternary logic circuits in 2-μm CMOS technology [J]. IEEE J of Solid-state Circuits, 1990, 25 (3): 790-799.
  • 4Mangin J L, Current K W. Characteristics of prototype CMOS quaternary logic encoder-decoder circuits[J]. IEEE Trans on Computers, 1986, C-35 (2): 157-161.
  • 5Shibata T, Ohmi T. A functional MOS transistor featuring gate-level weighted sum and threshold operations[J]. IEEE Trans on Electron Device, 1992, :39 (6): 1 444-1 455.
  • 6Hasler P, Lande T S. Overview of floating-gate devices, circuits, and systems[J]. IEEE Trans on Circuits and Systems-Ⅱ: Analog and Digital Signal Processing, 2001, 48(1): 1-3.
  • 7Hanyu T, Kanagawa N, Kameyama M. Design of a one-transistor-cell multiple-valued CAM[J]. IEEE J of Solid-state Circuits, 1996, 31(11):1 669-1 674.
  • 8Ogawa K, Shibata T, Ohmi T, et al. Multiple-input neuron MOS operational amplifier for voltage-mode multivalued full adder[J]. IEEE Trans on Circuits and Systems Ⅱ: Analog and Digital Signal Processing, 19983 45(9):1 307-1 311.
  • 9Han S, Choi Y, Kim H. A 4-digit CMOS quaternary to analog converter with current switch and neuron MOS down-literal eireuit[C]. Proe of the IEEE International Symp on Multiple-valued Logic, 2001: 67- 74.
  • 10Srivastava A, Venkata H N, Ajmera P K. A novel scheme for a higher bandwidth sensor readout[C]. Proc of SPIE, 2002, 4700: 17-28.

二级参考文献14

  • 1吴训威.指导nM0S数字电路元件级设计的开关信号理论[J].电子学报,1993,21(11):83-86. 被引量:10
  • 2吴训威,Int J of Electronics,1993年,75卷,1023页
  • 3庄南,IEEE J Solid.State Circuits,1992年,27卷,840页
  • 4吴训威,Theory and Applications,1992年,20卷,891页
  • 5吴训威,IEEE Proc ISMVL Victoria,1991年
  • 6吴训威,IEEE Proc G,1991年,138卷,21页
  • 7吴训威,Int J of Electronics,1991年,71卷,1023页
  • 8吴训威,Int J of Electronics,1988年,65卷,891页
  • 9Shen J P,IEEE Design & Test of Computers,1987年,4卷,4期,15页
  • 10G Hang,X Wu.Current-mode CMOS circuits design based on current threshold-controllable technique[A].Proceedings of IEEE Asia Pacific Conference on Circuits and Systems[C].Piscataway,NJ:IEEE Service Center,2000.529-532.

共引文献21

同被引文献12

  • 1Yang Yuan, Yu Ning-mei, Gao Yong et al. A novel neu- MOS source follower cell with high precision[ J]. Chinese Journal of Semiconductors, 2004, 25 (9) : 1074-1078.
  • 2Mortezapour S, Lee E. A 1-V 8-bit succesive approximation ADC in standard CMOS process [ J ]. IEEE Journal Solid-State Circuits, 2000, 35(4) :642-646.
  • 3Promitzer G. 12-b low-power fully differential switched capacitor noncalibrating successive approximation ADC with 1MS/s [J]. IEEE Journal Solid-State Circuits, 2001, 36 (7) :1138-1143.
  • 4Doemberg J, Gray P, Hodges D. A 10-bit 5-M sample/s CMOS two-step flash ADC [ J ]. IEEE Journal Solid-State Circuits, 1989, 2(4) :241-249.
  • 5Choi M, Abidi A A. A 6-b 1.3-G sample/s A/D converter in 0.35μm CMOS [ J ]. IEEE Journal Solid-State Circuits, 2001, 36(12) : 1847-1858.
  • 6Peter S, Maarten V. A 6-b 1.6-gsample/s flash ADC in 0.18μmCMOS using averaging termination[ J]. IEEE Journal Solid-State Circuits, 2002, 37(12) :1599-1609.
  • 7Abo A, Gray P. A I. 5-V, 10-bit, 14.3-MS/s CMOS pipeline analog-to-digital converter[ J]. IEEE Journal Solid - State Circuits, 1999, 34(5) :599-606.
  • 8Groza V Z. High-resolution floating-point ADC [J].IEEE Solid-State Circuits, 2004, 50 (6) : 1822-1829.
  • 9Lewis S H. 10b 20MS/ s analog-to-digital converter [ J]. IEEE Solid-Stage Circuits,2005 , 7 (12) : 351-358.
  • 10Shibate T, Ohmi T. A functional MOS transistor featuring Gate-level weighted sum and threshold operations [ J ]. IEEE Transactions Electron Devices, 1992, 39 (6) : 1444- 1455.

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