摘要
用射频等离子体增强非平衡磁控溅射在Si100基底上沉积了金属Cu膜。研究了偏压,射频功率和磁场等沉积参数对膜性能的影响。用扫描电子显微镜(SEM)、原子力显微镜(AFM)、X射线衍射(XRD)和电子能谱(EM)检测了膜的表面形貌,结构和成分。结果表明,射频放电有利于表面均匀光滑、电导率高的Cu沉积膜的形成;沉积参数对沉积膜的性能有重要的影响。
Metallic copper films are deposited on Sil00 substrate by radio-frequency plasma enhanced unbalanced magnetron sputtering, and film performance is studied by changing deposition parameters such as bias voltage, rf power and magnetron. The morphology, structure and element of the films are examined by scanning electron microscopy, atomic force microscope (AFM), X-ray diffraction (XRD) and electron spectroscopy (EM). The results show that rf discharge has advantages in depositing equality smooth and high conductivity Cu film and deposition parameters are important for film performance.
出处
《核聚变与等离子体物理》
EI
CAS
CSCD
北大核心
2007年第3期264-268,共5页
Nuclear Fusion and Plasma Physics
基金
国家自然科学基金资助项目(50277003和10505005)
关键词
射频
非平衡磁控溅射
CU膜
Radio-frequency
Unbalanced magnetron sputtering
Cu film