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射频对非平衡磁控溅射沉积Cu膜的影响 被引量:2

Radio-frequency influences on Cu film deposited by unbalanced magnetron sputtering
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摘要 用射频等离子体增强非平衡磁控溅射在Si100基底上沉积了金属Cu膜。研究了偏压,射频功率和磁场等沉积参数对膜性能的影响。用扫描电子显微镜(SEM)、原子力显微镜(AFM)、X射线衍射(XRD)和电子能谱(EM)检测了膜的表面形貌,结构和成分。结果表明,射频放电有利于表面均匀光滑、电导率高的Cu沉积膜的形成;沉积参数对沉积膜的性能有重要的影响。 Metallic copper films are deposited on Sil00 substrate by radio-frequency plasma enhanced unbalanced magnetron sputtering, and film performance is studied by changing deposition parameters such as bias voltage, rf power and magnetron. The morphology, structure and element of the films are examined by scanning electron microscopy, atomic force microscope (AFM), X-ray diffraction (XRD) and electron spectroscopy (EM). The results show that rf discharge has advantages in depositing equality smooth and high conductivity Cu film and deposition parameters are important for film performance.
出处 《核聚变与等离子体物理》 EI CAS CSCD 北大核心 2007年第3期264-268,共5页 Nuclear Fusion and Plasma Physics
基金 国家自然科学基金资助项目(50277003和10505005)
关键词 射频 非平衡磁控溅射 CU膜 Radio-frequency Unbalanced magnetron sputtering Cu film
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  • 1Inberg A, Shacham-Diamand Y, Rabinovich E, et al. Electroless-deposited Ag-W films for microelectronics applications [J]. Thin Solid Films, 2001, 389: 213-218.
  • 2Cao D M, Wang T, Feng B, et al. Amorphous hydrocarbon based thin films for high-aspect-ratio MEMS applications[J]. Thin Solid Films, 2001, 398-399: 553-559.
  • 3Kwok T, Finnegan J, Johnson D. Effects of line length and bend structure on electromigration lifetime in Al-Cu submicron interconnects [R]. IEEE VLSI Multilevel Interconnection Conf. (Santa Clara, CA), 1988. 436-445.
  • 4吴德馨.迈进二十一世纪的集成电路[J].世界科技研究与发展,1999,21(4):1-9. 被引量:3
  • 5Harper J M E, Colgan E G, Hu C K, et al. Materials issues in copper interconnections [R]. MRS Bulletin, 1994, 23-29.
  • 6Murarka S E Multilevel interconnections for ULSI and GSI era [J]. J. Mater. Sci. Eng., 1997, R19(3-4): 87- 151.
  • 7Hopwood J. Review of inductively coupled plasmas for plasma processing [J]. Plasma Sources Sci. Techn., 1992, 1: 109-116.
  • 8Keller J H, Foster J C, Barnes M S. Novel radio-frequency induction plasma processing techniques [J]. J. Vac. Sci. Techn., 1993, A11(5): 2487-2491.
  • 9Dickson M, Zhong G, Hopwood J. Radial uniformity of an external-coil ionized physical vapor deposition source [J]. J. Vac. Sci. Techn. B, 1998, Mar/Apr 16 (2): 523-531.
  • 10Liu C S, Chen L J. Effects of substrate cleaning and film thickness on the epitaxial growth of ultrahigh vacuum deposited Cu thin films on (001) Si [J]. Applied Surface Science, 1996, 92: 84-88.

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