反应堆脉冲中子和γ射线辐照SiGe HBT器件的退火因子及典型直流参数测量分析

Measurement and analysis of annealing factor and typical dc electronic parameters for SiGe HBT irradiated by neutrons and gamma rays in a pulsed reactor

本工作测量了反应堆脉冲中子、γ辐照SiGeHBT典型直流电参数和退火因子。在反应堆1×10^(13)cm-2的脉冲中子注量和257Gy(Si)γ总剂量辐照后,SiGeHBT静态共射极直流增益减小了20%。辐照后基极电流、结漏电流增大,集电极电流、击穿电压减小。初步分析了SiGeHBT瞬态中子、γ辐射损伤机理。

The dc electronic parameters and annealing factor change of SiGe HBT irradiated by neutron and gamma-rays in a pulsed reactor were measured. The dc common emitter static current gain of the SiGe HBTs decreased by about 20% after the irradiation with 1×10^13 cm^-2 neutron fluence and 257 Gy（Si） in gamma-ray total dose. The base current and the junction leakage current increased, whereas the collector current and the breakdown voltage decreased for SiGe HBT after the irradiation. Mechanisms of the radiation-induced damage to SiGe HBT are discussed.