摘要
采用与单光电子相比较的方法测量了国产GSO晶体样品的光电子产额,结果表明,GSO样品的光电子产额及能量分辨率与闪烁体在光电倍增管光阴极面上的放置方式有关,在较好条件下,被测GSO晶体的光电子产额可到2013phe/MeV,对137Cs 661.6keV光峰的能量分辩为FWHM=10.1%。
We measured the light yield of some GSO samples which produced in China with a method of
comparing with the mono-photoeleetron. The results show these GSO samples have a light yield of 2013phe/MeV and the energy resolution of 10.1% at 661.6keV photo-peak for ^137Cs . It is noted that light yield and energy resolution are related to the placing way through which the scintillators are put on the photocathode of PMT.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
2007年第4期727-729,共3页
Nuclear Electronics & Detection Technology
关键词
GSO晶体
光产额
单光电子
GSO crystal
light yield
mono-photoelectron
