一种新型超宽带CMOS低噪声放大器设计

Design of a new Low Noise Amplifier for Ultra-wideband Applications

结合电阻并联反馈,利用PCSNIM流程设计了一个用于超宽带(UWB)系统的宽带LNA电路。电阻并联反馈降低了输入电路的Q值,使窄带LNA带宽增加,而对NF的影响很小。用TSMC0.18CMOS工艺进行仿真,结果表明,LNA在3.1￣5.1GHz带宽范围内NF小于2.9dB,输入匹配优于-10.5dB,功率增益为12.9dB,带内波动仅为1dB。在1.8V电源电压下,核心电路功耗为7.5mW。

A wideband low noise amplifier （LNA） topology for ultra-wideband （UWB） system is proposed by combining PCSNIM design flow with a resistive shunt-feedback. The resistive shunt-feedback provides wideband input matching with small noise figure （NF） degradation by reducing the Q-factor of the narrowband LNA input. Results from the simulation using TSMC＇s 0.18 CMOS technology show a maximum NF of 2.9dB, better than -10.5dB of input matching and a power gain of 12.9dB with only ldB variations over the entire band from 3.1 GHz to 5.1 GHz. The core LNA consumes 7.5mW with a 1.8V supply.