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一种SET/CMOS混合器件模型的建立及特性分析 被引量：1

A SET/CMOS Hybrid Device model and Analysis of Characterization
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摘要 本文基于一种单电子晶体管数学模型(改进的MIB模型),实现其SPICE宏模型。提出一种改进型SET/CMOS混合器件模型,并用SPICE对其I-V特性进行了仿真验证,仿真结果证实了电流与电压具有线性关系。此混合模型的线性电流区可以在积分器以及滤波器电路中得到应用。 Based on a Mathematical model of single electron transistor （the modified MIB model）. The SPICE macro model is implemented. A Novel SET/CMOS Hybrid Device model is proposed. It＇s I-V characteristics are simulated by the SPICE. The result proved that the current is linear function of the voltage. It can be used in integrator and filter circuit.
作者 史党院 蔡理 邵一丹
机构地区 空军工程大学理学院
出处 《微计算机信息》 北大核心 2007年第29期283-284,106,共3页 Control & Automation
基金 陕西省自然科学基金项目(2005F20) 空军工程大学理学院科研资助项目(2005ZK19)
关键词 单电子晶体管 SET/CMOS 库伦阻塞效应 SPICE Single electron transistor, SET/CMOS, Coulomb blockade oscillation, SPICE
分类号 TN321 [电子电信—物理电子学]
  • 相关文献

参考文献5

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共引文献5

同被引文献7

  • 1J.A.Hutchhy, G.I.Bourianoff, V .V .Zhimov etal. , IEEE Circuits and Device Magazine, March 2002. pp. 28-41.
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  • 6Kousuke Miyaji, Masumi Saitoh, Toshiro Hiramoto. Compact Analytical Model for Room-Temperature-Operating Silicon Single- Electron Transistors with Discrete Quantum Energy Levels. 2006 IEEE, Trans. on nanotechnology, 5(3):pp167-173.
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微计算机信息
2007年 第29期

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