摘要
根据半导体器件的设计特点和设计原则,对600 A/3 000 V非对称型门极换流晶闸管进行了结构参数的优化设计,得到了材料参数与结构参数的关系.阴极采用条状同心环单元发射极排列结构,不仅可以提高单元承受应力的能力,而且可使单元均匀性得到改善.应用数值分析,使器件的透明阳极和缓冲层等关键结构的掺杂分布、区域宽度以及少子寿命得到优化,计算结果满足设计的要求.
Optimal structural parameters of a 600A/3000V asymmetric gate commutation thyristor(AS- GCT)were determined according to the design characteristics and criteria of semiconductor devices. Optimal relationships between material and structural parameters were quantitatively investigated. The ideal cathode was found to be strips of emitters arranged in concentric rings around the device center. This increased the thermal and electrical stresses that the emitter tolerated and improved the uniformity of cells. Key structural parameters, such as the dopant distribution of the transparent anode and buffer layer as well as the lifetime of the minority carrier, were optimized. As a result, design requirements are satisfied.
出处
《哈尔滨工程大学学报》
EI
CAS
CSCD
北大核心
2007年第9期1044-1047,共4页
Journal of Harbin Engineering University
基金
哈尔滨工程大学基础研究基金资助项目(002080260727)
关键词
功率半导体器件
优化设计
门极换流晶闸管
缓冲层
透明阳极
power semiconductor device
optimal design
gate commutation thyristor
buffer layer
transparent anode