O_2/SF_6混合气体对光刻胶的离子刻蚀研究

Research on Reactive Ion Etching of PR in O_2/SF_6 Mixtures

以O2+SF6为刻蚀气体,在一定压力下使用RIE刻蚀机刻蚀光刻胶。通过改变功率、O2流量和SF6流量,研究以上因素的改变对光刻胶灰化速率的影响。实验结果表明:单组分O2存在下,O2流量的增加不会影响光刻胶的灰化速率。设备Plasma功率以及气体比率变化对灰化率有显著影响,并通过光谱分析对光刻胶的灰化反应机理进行了初步研究。

PR ashing rate and uniformity have been studied in SF6/O2plasma, Ashing rate has been measured at different gas flow rate,plasma power and SF6/O2 gas ratio, and the spectrum intensity have been stored by End Point Detector System, The results show that, plasma power and gas ratio have great relationship with ashing rate, and the intensity of Ion has effect in ashing process.