利用同质缓冲层溅射生长c轴择优取向氮化铝薄膜

Sputtering growth of preferential c-axis-oriented aluminum nitride film using homogeneous buffer layer

采用射频反应磁控溅射技术,利用低温低功率下生长的氮化铝(AlN)作为缓冲层,在铟锡复合氧化物(ITO)玻璃衬底上制备出具有良好c轴择优取向的多晶AlN薄膜.采用X射线衍射仪(XRD)、原子力显微镜(AFM)和场发射扫描电子显微镜(FESEM)研究了缓冲层对薄膜结晶特性和表面形貌的影响.结果表明,该缓冲层在提高AlN薄膜结晶质量的同时,薄膜的表面粗糙度由19.1 nm减小到2.5 nm,使薄膜表面更为平滑、致密.剖面扫描电子显微镜(SEM)照片显示AlN晶粒呈高度一致的柱状生长体制.通过分析样品的透射光谱,计算得到AlN薄膜的折射率和消光系数分别为2.018 7和0.007 7.

Polycrystalline aluminum nitride （AlN） thin film with c-axis preferred orientation was deposited on indium tin oxide （ITO） glass substrate by reactive radio frequency （RF） magnetron sputtering, which introduced a low temperature AlN interlayer as buffer layer. The deposited films were characterized by X- ray diffraction （XRD）, atomic force microscopy （AFM） and field emission scanning electron microcopy （FESEM） to investigate the influence of the buffer layer on the crystalline quality and surface morphology. The results indicated that the introduction of the buffer layer tended to improve the crystallization of AlN films and meanwhile decrease the surface roughness from 19. 1 nm to 2. 5 nm, leading to a dense and smooth surface texture. The cross-sectional scanning electron microcopy （SEM） photographs of AlN films showed a high degree of alignment for the columnar structure. Furthermore, transmission spectra were studied to obtain the refractive index （2. 018 7） and the extinction coefficient （0.007 7） of the deposited films.